KULeuven, imec and AIST have developed a solid phase epitaxy process to integrate germanium tin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on silicon. For the first time, operation of depletion-mode junctionless GeSn pMOSFET on silicon was demonstrated, an important step toward achieving tensile strain in MOSFET devices, and increasing their mobility. To improve performance in next-generation scaled complementary metal-oxide semiconductor (CMOS) devices, researc...